Graphitic Schottky Contacts to Si formed by Energetic Deposition

摘要

Carbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100°C has produced carbon diodes with rectification ratios of ～3 × 10~6, saturation currents of ～0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO_2) layer from the current/voltage characteristics of the diodes.