Novel InGaAsN pn junction for high-efficiency multiple-junction solar cells

摘要

Summary form only given. This paper describes the development of a novel low bandgap (1.05 eV) p-n junction, based on InGaAsN, which is promising for next-generation high-efficiency multiple junction solar cells for use in space power systems. The paper describes simulations, the development of an MOCVD growth procedure, and testing of diode characteristics and photovoltaic properties