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The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes(Micro-LEDs)

机译：GaN / IngaN多量子阱微发光二极管（微LED）的理想因子的尺寸和温度效应

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《International Conference on Display Technology;Society for Information Display》||1-4|共4页
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Yibo Liu; Ke Zhang; Joe Chan; Sze-Yan Yeung; Zhaojun Liu; Hoi-Sing Kwok;
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1. The Origin Of The High Diode-ideality Factors In Gainn/gan Multiple Quantum Well Light-emitting Diodes [J] . Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Applied Physicsletters . 2009,第8期

机译：Gainn / gan多量子阱发光二极管中高二极管理想性因素的起源
2. Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes [J] . Hee Kwan Lee, Jae Su Yu Japanese journal of applied physics . 2010,第4issue2期

机译：不同台面尺寸的InGaN / GaN多量子阱发光二极管的热分析
3. On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes [J] . Prudaev I. A., Kopyev V. V., Romanov I. S., Semiconductors . 2017,第2期

机译：基于弹性溢流对Ingan / GaN多量子孔发光二极管量子效率温度依赖性的影响
4. Temperature dependence of light-output performance of InGaN/GaN multiple-quantum well light-emitting diodes with various In compositions [C] . Chul Huh, William J. Schaff, Lester F. Eastman, International Conference on Solid State Lighting . 2004

机译：InGaN / GaN多量子孔发光二极管具有各种组成的光输出性能的温度依赖性
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate [O] . Changda Zheng, Li Wang, Chunlan Mo, 2013

机译：等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
7. InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes [O] . G.F. Yang, Q. Zhang, J. Wang, 2016

机译：选择性生长的GaN微平面上的InGaN / GaN多量子阱以及无荧光白光发光二极管的应用

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