Bi_2Se_3 is one of the prominent material for Topological Insulator. Bi_2Se_3 and 8% Mn doped Bi_2Se_3 (i.e. Bi_(1.6)Mn_(0.4)Se_3) samples have been grown using a solid state reaction method. Characterization have been done for their structural, elemental, electrical-transport and magnetic properties. High resolution x-ray diffraction (HR-XRD) data revels both the samples have rhombohedral layered structure with space group (R3m). Metallic behavior is observed from resistivity variation with temperature curve in case of un-doped Bi_2Se_3 in the temperature range 16-300K, but a clear up-turn at low temperature is seen for Bi_(1.6)Mn_(0.4)Se_3. Metallic behavior in Bi_(1.6)Mn_(0.4)Se_3 is observed above 45 K, but below 45K, semiconducting/insulating behavior has been observed due to the effect of magnetic impurity. Vibrating sample magnetometry (VSM) measurement revels Bi_2Se_3 is diamagnetic and Bi_(1.6)Mn_(0.4)Se_3 shows an anti-ferromagnetic behavior in the temperature range 8_300K. From this investigation one can understand how magnetic impurity doping tuned the properties of conventional Topological Insulators.
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