State-of-the-art manufacturing of semiconductor devices involves electrodeposition of copper interconnects The process depends on additives that affect the local deposition rate to yield void-free superconformal, or bottom-up filling of trenches and vias. Chemical process models describing the filling of high aspect ratio features, from nanometers (on-chip wiring) to micrometers (through-silicon-vias) to millimeters (printed circuit boards) are available. Nevertheless, much remains to be known about the molecular nature and competitive, co-adsorption dynamics of the additives and their impact on metal deposition. This lecture will detail experiments that reveal the important role of competitive, coadsorption of polyether, Cl-, SPS and LEV additives in controlling the hydrophilicity of the interface and thereby the rate of metal deposition during superconformal film growth.
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