Resistance Change Behavior Under Voltage Pulses at Reset Process of Ti/HfO_2/Au-Reram with Various HfO_2 Layer Conditions

摘要

Recently the application of ReRAM to artificial synapse has been paid much attention in the field of neuromorphic computing. For the implementation of neuromorphic synaptic devices, gradual resistance change response by applying voltage pulse trains is required. We investigated the condition of Ti/HfO_x/Au-ReRAM to possess gradual resistance change by changing sputtering conditions of HfO_x layer.