Ge technology is obviously not new, but its recent progress is in marked contrast to the past research and is based on deep understanding of materials science in Ge (1). Ge CMOS is quite interesting not only from the high mobility but also from CMOS compactness rather than "III-V for n-MOS and Ge for p-MOS". From the EOT scalability viewpoint, sub-nm EOT gate stacks are required to keep the intrinsically high performance of Ge. GeOx-free gate stacks will be another advantage of Ge by choosing appropriate high-k dielectrics. Furthermore, we can expect versatile device opportunities and applications more suitable for Ge such as pure metal source/drain FETs or junction-less FETs.
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机译：GE技术显然不是新的，但其最近的进展与过去的研究表明对比，并基于GE（1）中材料科学的深刻理解。 GE CMOS不仅有趣，不仅来自高级移动性，而且来自CMOS紧凑性而不是＆＃X0022; III-V对于N-MOS和GE for P-MOS＆＃x0022; 从EOT可伸缩性观点来看，需要子NM EOT栅极堆栈以保持GE的内在高性能。 通过选择合适的高k电介质，Geox-Fieel栅极堆叠将是GE的另一个优势。 此外，我们可以预期多功能的设备机会和应用更适合于GE，例如纯金属源/漏流体或不少的FET。
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