Si-based lasers have long been sought because they serve as light sources for monolithic integration of Si electronics with photonic components on the same Si or silicon-on-insulator (SOI). Unfortunately, Si has not been a material of choice for luminescence applications owing to its indirect bandgap. The material system composed of group-IV elements (Si, Ge, Sn) and their alloys is an excellent new technology that holds the promise to achieve the Si-based lasers. This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group-IV system.
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