Single Atom Devices in Silicon and Germanium

摘要

Over the past decade we have developed a radical new strategy for the fabrication of atomic-scale devices in silicon and germanium [1-4]. Using this process we have demonstrated that Ohm''s Law survives to the atomic-scale [4,5] and the formation of all-epitaxial single electron transistors [6,7] down to the few electron limit. Most recently we have demonstrated a precision single atom transistor [8]. We will present atomic-scale images and electronic characteristics of these atomically precise devices and demonstrate the impact of atomically abrupt vertical and lateral confinement on electron transport. We will also highlight some recent results towards single shot spin read-out of these precisely placed donors and present some of the challenges to achieving truly scalable donor based quantum computing architectures in silicon. [1] S. R. Schofield et al., Physical Review Letters 91, 136104 (2003). [2] H.F. Wilson et al., Physical Review Letters 93, 226102 (2004). [3] F.J. Ruess et al.,, Nano Letters 4, 1969 (2004). [4] F.J. Ruess et al., Small 3, 567 (2007); Nanotechnology 18, 044023 (2007). [5] G. Scappucci et al., Nano Letters 11, 2272 (2011). [6] B. Weber et al., Science 335, 64 (2012). [7] A. Fuhrer et al., Nano Letters 9, 707 (2009). [8] M. Fuechsle et al., Nature Nanotechnology 5, 502 (2010). [9] M. Fuechsle et al., Nature Nanotechnology, DOI: 10.1038/NNANO.2012.21, Published on-line:19 February (2012).