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Process for obtaining a layer of single crystal germanium or silicon on single cystal silicon or germanium substrate respectively, and multilayer products thus obtained
Process for obtaining a layer of single crystal germanium or silicon on single cystal silicon or germanium substrate respectively, and multilayer products thus obtained
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机译:分别在单晶硅或锗衬底上获得单晶锗或硅层的方法,以及由此获得的多层产品
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摘要
The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450 DEG C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.
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