Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively

摘要

The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single- crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800- 450° C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.