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Determining the voltage dependence of the light generated current in CuInSe2-based solar cells using I-V measurements made at different light intensities

机译:使用在不同光强度下制作的I-V测量的Cuinse 2 基于太阳能电池的光产生电流的电压依赖性

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As the bandgap of CuInSe2 is increased by alloying with Ga or S, the loss in efficiency due to the decrease of light generated current with increasing voltage becomes important. The standard technique of quantifying this loss is to analyze spectral response measurements made as a function of applied voltage. Instead, it is shown how to determine the voltage dependence of the light generated current by an analysis of the current-voltage (I-V) measurements made at two different light intensities. By adding an I-V measurement at a third light intensity one can also determine if the analysis technique is valid
机译:随着Cuinse 2 的带隙,通过与Ga或s合金化增加,由于光产生电压的光产生电流降低,效率的损耗变得重要。 量化该损耗的标准技术是分析作为施加电压的函数所做的谱响应测量。 相反,示出了如何通过在两种不同光强度下进行的电流 - 电压(I-V)测量的分析来确定光产生电流的电压依赖性。 通过在第三光强度下添加I-V测量,还可以确定分析技术是否有效

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