首页> 外文会议>Conference on Micro(MEMS) and Nanotechnologies for Defense and Security >Growth and characterization of ZnO nanowires for various sensor applications
【24h】

Growth and characterization of ZnO nanowires for various sensor applications

机译:各种传感器应用ZnO纳米线的生长和表征

获取原文

摘要

In this Paper we present growth and characterization of ZnO nanowires on a variety of substrates, such as Silicon and SiC. Experimental results on the ZnO nanowires grown on Si and SiC are presented with growth morphology, structure analysis, and dimensionality control. The ZnO nanowires can be used for a variety of nanoscale optical and electronics sensors.
机译:在本文中,我们在各种基材上呈现ZnO纳米线的增长和表征,例如硅和SiC。 Si和SiC上生长的ZnO纳米线的实验结果提出了生长形态,结构分析和维度控制。 ZnO纳米线可用于各种纳米级光学和电子传感器。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号