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Growth, Doping, and Characterization of ZnO Nanowires: Application in a Miniaturized Gas Ionization Sensor

机译:ZnO纳米线的生长,掺杂和表征:在小型气体电离传感器中的应用

摘要

ABSTRACTudGrowth, Doping, and Characterization of ZnO Nanowires: Application in a Miniaturized Gas Ionization SensorududSvetlana Spitsina, Ph. D.udConcordia University, 2013udud Semiconductor ZnO has been the subject of research for many applications for the past several years, because the material is nontoxic, biosafe, chemically stable, and biocompatible. In this work we report studies on ZnO nanowires (NWs), its fabrication and applications. Techniques are developed to control the morphology and distribution of ZnO Nanowires (NWs). We have also investigated the conductivity of nanowires and its manipulation using various doping materials and their concentrations. Fabricated nanowires have potential applications such as integration in nano optoelectronics, solar cells, gas or humidity sensors, and many other devices. In this thesis we have explored its application to develop a gas sensor based on the ionization of gases, so-called Gas Ionization Sensor (GIS). ud A GIS based on metallic nanowires (NWs) had been previously designed and developed in the Micro/Nano Laboratories in the ECE Department at Concordia University. However, the reported device suffered from very low durability. The high voltages induced at the NWs tips damage the apexes (due to their thin structure) and device loses its sensitivity after several episodes of usage. ud High performance GIS sensors demand specific morphology of NWs, uniform distribution, low density, and demand that NWs be made of highly conductive and chemically stable materials. In this work we have introduced ZnO nanowires to replace the metallic nanowires in the GIS. It is the core of thesis to fabricate ZnO NWs having the characteristics to improve the functioning of the GIS. ud In these investigations we have focused on the electrochemical synthesis of nanowires. We used this technique due to its advantages such as low cost, high throughput, repeatability, uniform and large area synthesis of NWs, strong adhesion of NWs to the substrate, ability to grow them with desired morphologies, as well as the possibility of effective doping during the growth. Effects of various growth parameters on the nanowire structures are investigated. Studies on doping the nanowires, p-type and n-type, were carried out. ZnO NWs with desired structures and conductivity were used to design and fabricate a GIS. The device was tested for various gases. Significantly improved performance of the GIS was demonstrated. GISs with p-type ZnO NWs illustrated high field enhancement factors because of the morphology, distribution, and conductivity of nanostructures. Also, the novel gas detectors illustrated superior sensitivity, reliability, and repeatability.ud
机译:ZnO纳米线的抽象,生长,掺杂和表征:在微型气体电离传感器中的应用 ud udSvetlana Spitsina博士 udConcordia大学,2013 ud ud半导体ZnO一直是许多应用研究的主题在过去的几年中,由于该材料无毒,生物安全,化学稳定且具有生物相容性。在这项工作中,我们报告了有关ZnO纳米线(NW),其制造和应用的研究。开发了控制ZnO纳米线(NWs)的形态和分布的技术。我们还研究了纳米线的电导率及其使用各种掺杂材料及其浓度的操纵方式。制成的纳米线具有潜在的应用,例如集成在纳米光电,太阳能电池,气体或湿度传感器以及许多其他设备中。在本文中,我们探索了其在开发基于气体电离的气体传感器中的应用,即所谓的气体电离传感器(GIS)。 ud先前已经在Concordia大学ECE系的Micro / Nano实验室中设计和开发了基于金属纳米线(NW)的GIS。然而,所报道的设备具有非常低的耐久性。在NW尖端产生的高电压会损坏顶点(由于其较薄的结构),并且在多次使用后设备会失去其灵敏度。 ud高性能GIS传感器要求NW具有特定的形态,均匀分布,低密度,并且要求NW由高导电性和化学稳定的材料制成。在这项工作中,我们引入了ZnO纳米线来代替GIS中的金属纳米线。制备具有改善GIS功能的ZnO纳米线是本文的核心。在这些研究中,我们集中于纳米线的电化学合成。我们使用此技术的原因是它的优点包括:低成本,高通量,可重复性,NW的均匀和大面积合成,NW对基板的强粘附性,能够以所需形态生长它们的能力以及有效掺杂的可能性在成长过程中。研究了各种生长参数对纳米线结构的影响。进行了掺杂p型和n型纳米线的研究。具有所需结构和导电性的ZnO NW用于设计和制造GIS。测试了该设备的各种气体。证明了GIS的性能显着提高。具有p型ZnO NW的GIS由于纳米结构的形态,分布和电导率而显示出高场增强因子。此外,新型气体检测器还显示出出众的灵敏度,可靠性和可重复性。

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