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Photoelectric properties of thin Eu~(3+)-doped TiO_2 films sensitized by cis-RuL_2(SCN)_2·2H_2O

机译:薄EU〜(3 +) - 掺杂TiO_2薄膜的光电性能由CIS-RUL_2(SCN)_2·2H_2O感染

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Thin nanocrystalline TiO_2 films doped by europium ions (Eu~(3+)) were obtained by the sol-gel method. The photoelectric properties of Eu~(3+)-doped TiO_2 film electrode sensitized by cis-RuL_2(SCN)_2· 2H_2O (L = cis-2,2'-bipyridine-4,4'-dicarboxlic acid) ruthenium complex were studied. The thin films were characterized by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Effect of doping Eu~(3+) on microscopic structure and photoelectrical properties were discussed. The result shows that doping europium ions makes specific surface area of these films larger, which contributes to improving the photoelectric properties. It is found that an optimal composition doped with 0.2 mol. % Eu~(3+) exhibits the highest photoelectric properties. I(sc) is 0.37 mA·cm~(-2), which is 0.17 mA·cm~(-2) bigger than that of un-doped films; V_(oc) is 405 mV, which is 50 mV bigger than that of un-doped films.
机译:通过硒离子掺杂的薄纳米晶体TiO_2薄膜(Eu〜(3+)通过溶胶 - 凝胶法得到。 研究了CIS-RUL_2(SCN)_2·2H_2O(L = CIS-2,2'-Bi0赖氨酸-4,4'-二羧酸)钌络合物致敏的EU〜(3 +)掺杂TiO_2薄膜电极的光电性能 。 薄膜的特征在于X射线衍射,原子力显微镜和X射线光电子谱。 探讨了掺杂EU〜(3+)对微观结构和光电性能的影响。 结果表明,掺杂铕离子使得这些薄膜的比表面积更大,这有助于改善光电性能。 发现掺杂有0.2摩尔的最佳组合物。 %Eu〜(3+)显示出最高的光电性能。 I(SC)是0.37 mA·cm〜(-2),比未掺杂的薄膜大0.17mA·cm〜(-2); V_(OC)为405 mV,比未掺杂薄膜的50mV为50 mV。

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