Germanium p-MOSFETs with a thin high-k dielectric (EOT～ 1.6 ran) were fabricated on bulk Ge and epitaxial strained germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The strained germanium p-MOSFETs showed 2X enhancement in hole mobility compared to silicon control devices, a 35% increase in mobility compared to similarly processed bulk germanium p-MOSFETs, and enhanced transconductance relative to bulk Ge p-MOSFETs.
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