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Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs
Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs
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机译:用硅保护硅锗侧壁,以用于应变硅/硅锗MOSFET
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摘要
Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.
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