首页> 外文会议>Symposium on quasicrystals >Porous structure and high electrical resistivity of AlPdRe icosahedral phase
【24h】

Porous structure and high electrical resistivity of AlPdRe icosahedral phase

机译:多孔结构和高电阻率的Alpdre ICOSAHEDRAL阶段

获取原文

摘要

Mechanism of the strucutre formaiton of hte I-phases,which is requried for complete understanding of the origin of their high electrical resistivikty and preparation fo the high quality samples,is proposed.During annealing within 30 minutes,atomic diffusion of Al and Pd atoms from Al_3Pd phase to Al_0.7Re_0.3 phase occurs and orosity is formed in the Al_3Pd phase.It is supposed that the porosity formaiton results from Kirkendal effect.
机译:提出了HTE I-阶段的STRUCUTRE FORMAITON的机制,以完全了解其高电阻率的起源和制备高质量样品的原点。在30分钟内进行退火,AL和PD原子的原子扩散 Al_3PD相对于Al_0.7Re_0.3相发生,并且在Al_3PD相中形成苦难。假设孔隙率Formaiton由Kirkendal效应产生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号