Investigation of the V~(4+)-Center in 6H-SiC by the method of spectral-hole burning

摘要

In the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V~(4+/5+) level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H-4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.