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Perpendicular giant magnetoresistance of Co/Cu multilayers on V-grooved substrates: dependence on deposition method

机译:V沟槽基底上的CO / Cu多层垂直磁阻:依赖性沉积法

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The perpendicular giant magnetoresistance of Co/Cu multialeyrs grown at an angle onto V-grooved InP substrates is studied using two different deposition techniques. Samples are grown both at ultra-high vacuum in a molecular beam epitaxy system and in a classical high vacuum electron beam evaporation system. Using the two spin-channel model for electron transport, the spin-asymmetry parameters were determined. The absolute value and temperature behavior of the spin-asymmetry parameters of the Co bulk scattering and the interface scattering are comparable for both series. We find that the interface scattering of the e-beam evaporated multilayers is relatively less spin-dependent.
机译:使用两种不同的沉积技术研究了以一定角度生长在V沟槽的INP基板上的CO / Cu Multi8Lyrs的垂直巨磁阻。 样品在分子束外延系统中的超高真空和经典的高真空电子束蒸发系统中生长。 利用电子传输的两个自旋通道模型,确定旋转不对称参数。 Co散射散射的旋转不对称参数的绝对值和温度行为和界面散射对两种系列相当。 我们发现电子束蒸发多层的界面散射相对较少旋转依赖性。

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