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Effect of Process Temperature on the Growth Kinetic and Structure of Ge Nanowires Formed by Galvanostatic Electrodeposition Using in Nanoparticles

机译:工艺温度对纳米粒子电镀电沉积电镀电沉积电纳米线生长动力学和结构的影响

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In this work, germanium nanowires (GeNWs) were fabricated by galvanostatic electrodeposition using In nanoparticles from water solutions at different temperatures. It was found that in the temperature range from 10°C to 60°C there was no significant change in the structure of GeNWs, and the average diameter was about 40 nm. The growth time of GeNWs increases linearly with increasing temperature of the electrolyte solution. However, the structure of GeNW obtained at a solution temperature of 90°C has changed. It was shown that these GeNWs have a core-shell structure: the core is a crystalline Ge phase containing In atoms, and the shell is Ge oxides (hydroxides).
机译:在这项工作中,通过在不同温度下的水溶液中的纳米颗粒中使用纳米粒子来制造锗纳米线(GenW)。 发现在10℃至60℃的温度范围内,基因结构的结构没有显着变化,平均直径约为40nm。 随着电解质溶液的温度的增加,基因的生长时间线性增加。 然而,在90℃的溶液温度下获得的GenW的结构已经改变。 结果表明,这些基因具有核心壳结构:核心是含有在原子中的结晶Ge相,并且壳是Ge氧化物(氢氧化物)。

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