Effect of flatband voltage and surface field on the MOS capacitance under triangular potential well approximation

摘要

In this paper, the effect of flatband voltage shift on the capacitance of an p-type MOS device is theoretically described as functions of surface field, oxide thickness and doping concentrations. The capacitance of the device shows its higher values at lower flatband voltage, higher surface field, thinner gate oxide and lower doping concentration. The results are presented and discussed here.