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Multi-hole Tunneling between Charge Domains in Doped Antiferromagnets

机译:掺杂反霉菌的电荷域之间的多孔隧道

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We consider a doped quantum antiferromagnet in a phase of alternating hole-rich/hole-poor domains and we study tunneling of multi-hole clusters between neighboring hole-rich domains through the intervening antiferromagnetically ordered regions. We find that bound hole-pairs are much more effective in crossing the intervening antiferromagnetic domains as compared to single-hole of multi-hole clusters. This implies that the presence of the antiferromagnetic domains acts as a filter which allows only bound hole-pairs to exist throughout the entire system. We also find that at temperature of around 100 K bound hole-pairs can tunnel between neighboring hole-rich domains at high rates.
机译:我们考虑掺杂的富含空穴丰富/孔 - 孔 - 较差域的相位的掺杂量子反霉素,并且我们通过介入反铁磁性有序区域研究相邻的孔域之间的多孔簇的隧道。 我们发现,与多孔簇的单孔相比,绑定的孔对在穿过介入的反铁磁结构域时更有效。 这意味着反铁磁域的存在充当滤波器,其允许在整个系统中仅存在绑定的孔对。 我们还发现,在大约100 k的温度范围内,在富裕的孔富孔之间的隧道中可以隧道隧道。

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