DOMAIN WALL MOVEMENT MEMORY DEVICE HAVING ARTIFICIAL ANTIFERROMAGNETISM OR ARTIFICIAL FERRIMAGNETISM AND METHOD OF FORMING THE SAME

摘要

The present invention has an artificial antiferromagnetic domain walls move or artificially junban ferromagnetic memory device and provides the method for forming The . The apparatus comprises a memory cell region and a pattern disposed on the substrate having a plurality of cell area , the memory patterns are the first data storage pattern , a plurality of magnetic domains to proceed in parallel with the first data storage pattern having a plurality of magnetic domains a second data storage pattern , and at least one non-magnetic pattern interposed between the first data storage pattern and the second data storage pattern having .