Micro-Raman study of UV laser ablation of GaAs and Si substrates

摘要

Laser ablation of semiconductors presents an increasing interest for different purposes, such as surface modification. Morphologic and structural changes induced by UV-pulsed laser beams on GaAs and Si are studied by means of surface topography (optical interferometry) and micro-Raman spectroscopy. Crystal order and chemical composition (stoichiometry and dopant distribution) are shown to be changed by the ablation with energy above the melting threshold. Results are compared for GaAs and Si substrates.