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Half-DRAM: a High-bandwidth and Low-power DRAM Architecture from the Rethinking of Fine-grained Activation

机译:半德拉姆:高带宽和低功耗DRAM架构,从重新思考的细粒度激活

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DRAM memory is a major contributor for the total power consumption in modern computing systems. Consequently, power reduction for DRAM memory is critical to improve system-level power efficiency. Fine-grained DRAM architecture [1, 2] has been proposed to reduce the activation/precharge power. However, those prior work either incurs significant performance degradation or introduces large area overhead. In this paper, we propose a novel memory architecture Half-DRAM, in which the DRAM array is reorganized to enable only half of a row being activated. The half-row activation can effectively reduce activation power and meanwhile sustain the full bandwidth one bank can provide. In addition, the half-row activation in Half-DRAM relaxes the power constraint in DRAM, and opens up opportunities for further performance gain. Furthermore, two half-row accesses can be issued in parallel by integrating the sub-array level parallelism to improve the memory level parallelism. The experimental results show that Half-DRAM can achieve both significant performance improvement and power reduction, with negligible design overhead.
机译:DRAM记忆是现代计算系统中总功耗的主要贡献者。因此,DRAM内存的功率降低至关重要,以提高系统级功率效率。已经提出了细粒度的DRAM架构[1,2]以减少激活/预充电能力。然而,那些先前的工作要么引发显着的性能下降或引入大面积开销。在本文中,我们提出了一种新的存储器架构半DRAM,其中重组DRAM阵列以仅启用被激活的行的一半。半行激活可以有效地减少激活功率,同时维持一个银行可以提供的全部带宽。此外,半德中的半行激活放宽DRAM中的功率约束,并为进一步的性能增益开辟了机会。此外,可以通过集成子阵列级并行性来并行发出两个半行访问,以改善内存级并行性。实验结果表明,半德拉姆可以实现显着的性能提升和减少功率,具有可忽略的设计开销。

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