Current and Voltage control of intermediate states in bipolar RRAM devices for neuristor applications

摘要

The control of the intermediate conductance levels in Hf02-based MIM capacitors for neuromorphic applications is presented in this work. Using voltage or current control signals shows significant differences. The potentiation levels can be controlled in a linear way using current as control signal. These levels are achieved in very short times and only depends on the current pulse amplitude magnitude. On the contrary, depression levels cannot be controlled by current but with voltage pulses. A proper control of synaptic behavior requires the combination of both types of signals.