Photoluminescence study of GaAs nanowires with and without AlGaAs Shell

摘要

Photoluminescence of GaAs nanowires with and without AlGaAs Shell were analyzed detailly through temperature- and power-dependent photoluminescence spectroscopy. AlGaAs shell effectively eliminated the surface dangling bonds and defects caused by oxidation of GaAs surface. And a model of sub-bandgap absorption based on inhomogeneities in GaAs bandgap were applied to analyzed the "high energy tail" of GaAs nanowires with AlGaAs shell.