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ZnO thin films synthesis by RF magnetron sputtering deposition

机译:ZnO薄膜通过RF磁控溅射沉积合成

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Investigation of ZnO thin films synthesis using RF magnetron sputtering deposition in the Ar/O_2 plasma gas mixture at different O_2 composition and at different growth temperatures is presented. The effect growth process on structural (morphology and orientation films, grain sizes, lattice parameters) and optical (transmittance, absorption, refractive index, photoluminescence) properties are examined. It is shown that synthesized ZnO thin films at a temperature from 200 to 300 °C are polycrystal and textured. Notice that ZnO thin films, which are synthesized using pure Ar plasma gas, are porosity. The optical transmittance and absorption spectra have an absorption edge near 380 nm. The PL spectra of synthesized ZnO films show exciton peaks at 370-400 nm and the wide emission at the yellow and red spectral regions.
机译:施用在不同O_2组合物中使用RF磁控溅射沉积的ZnO薄膜合成的研究,并在不同的O_2组合物中进行。 研究了结构(形态学和定向膜,晶粒尺寸,晶格参数)和光学(透射率,吸收,折射率,光致发光)性质的效果生长过程。 结果表明,在200至300℃的温度下合成的ZnO薄膜是多晶和纹理的。 请注意,使用纯Ar等离子体气体合成的ZnO薄膜是孔隙率。 光学透射率和吸收光谱具有靠近380nm的吸收边缘。 合成的ZnO膜的PL光谱显示出在370-400nm的激子峰和黄色和红色光谱区域的广泛发射。

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