Parasitic Insensitive 16 - symbol Backscatter Modulator

摘要

Radio frequency spectrum is pushed to higher frequencies as semiconductor technology scales. Fine line semiconductor processes have enabled the realization of higher speed circuits. However, if the data communication technology is to be pushed to even higher speeds, novel circuit techniques will be required to overcome process limitations. In this work, we present a technique that overcomes the limitations of semiconductor process technology with respect to the design of a higher order backscatter modulator. A 5.8 GHz 16-symbol vector modulator is implemented in 0.5 μm silicon process and a futuristic technique to purposefully use unwanted parasitic capacitances to advantage is presented.