A Cross-Coupled Redundant Sense Amplifier for Radiation Hardened SRAMs

摘要

This paper proposes a redundant sense amplifier for radiation-hardened SRAMs, based on a latched cross-coupled topology. First, the most common issues related to SRAMs reliability and performances in radiation environments are discussed. Then, after an analytical study on the transient effects induced by radiations, based on a systematic design flow, a novel redundant sensing scheme is presented and discussed. Simulation results, carried out in a standard 130-nm CMOS, demonstrate the effectiveness of the solution.