Graded band gap InGaAs diodes for terahertz applications

摘要

The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of doping and composition profile on current-voltage characteristic of diode is investigated. The possibility of same direct motion of both types of charge carriers in the case of impact ionization is considered. Parameters that can lead to existing of the pointed regime are evaluated. Estimation of frequency properties of the discussed diodes is carried out.