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Electrically Conductive Nanostructured Silver Doped Zinc Oxide (Ag:ZnO) Prepared By Solution-Immersion Technique

机译:通过溶液浸泡技术制备的导电纳米结构银掺杂氧化锌(Ag:ZnO)

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p-type ZnO films have been fabricated on ZnO-seeded glass substrate, using AgNO_3 as a source of silver dopant by facile solution-immersion. Cleaned glass substrate were seeded with ZnO by mist-atomisation, and next the seeded substrates were immersed in Ag:ZnO solution. The effects of Ag doping concentration on the Ag-doped ZnO have been investigated. The substrates were immersed in different concentrations of Ag dopant with variation of 0, 1, 3, 5 and 7 at. %. The surface morphology of the films was characterized by field emission scanning electron microscope (FESEM). In order to investigate the electrical properties, the films were characterized by Current-Voltage (I-V) measurement. FESEM micrographs showed uniform distribution of nanostructured ZnO and Ag:ZnO. Besides, the electrical properties of Ag-doped ZnO were also dependent on the doping concentration. The I-V measurement result indicated the electrical properties of 1 at. % Ag:ZnO thin film owned highest electrical conductivity.
机译:在ZnO-Teched玻璃基板上制造了P型ZnO膜,其使用AgNO_3作为银掺杂剂的源泉浸泡。通过雾雾化用ZnO将清洁的玻璃基板接种,然后将种子底物浸入Ag:ZnO溶液中。研究了Ag掺杂浓度对Ag掺杂ZnO的影响。将底物浸入不同浓度的Ag掺杂剂,其变异为0,1,3,5和7。 %。薄膜的表面形态的特征在于现场发射扫描电子显微镜(FESEM)。为了研究电性能,通过电流 - 电压(I-V)测量来表征膜。 FeSEM显微照片显示纳米结构ZnO和AG的均匀分布:ZnO。此外,Ag掺杂ZnO的电性能也取决于掺杂浓度。 I-V测量结果指示1at的电气特性。 %AG:ZnO薄膜拥有最高的电导率。

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