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PVT Variations Aware Low Leakage DOIND Approach For Nanoscale Domino Logic Circuits

机译:PVT变化意识到纳米级Domino逻辑电路的低泄漏DOIND方法

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For high system performance in VLSI chips dynamic CMOS logic circuit techniques are used. As continue scaling down the dimension of transistors parameter variation becomes a serious issue in very deep sub-micron regime. The overall performance of any logic circuit reduces by increasing leakage current and variability of parameters in scaled device. To overcome the variability issue in sub-micron regime the design must be aware of variations. In this paper DOIND logic approach is proposed for domino logic to analyze the variability issue. This approach reduces leakage current as well as it reduces the variability issue with minimum delay penalty. Various process, voltage and temperature (PVT) variations are analyzed at 70 nm technology node for a domino logic and DOIND logic buffer using tanner EDA tool. Simulation result shows that DOIND approach has less affect of PVT variations as compare to domino logic circuit.
机译:对于高系统性能,在VLSI芯片中使用动态CMOS逻辑电路技术。随着继续缩放晶体管的尺寸,参数变化在非常深的子微米制度中变得严重问题。任何逻辑电路的整体性能都通过提高缩放设备中的参数的漏电流和可变性来减少。为了克服子微米制度中的可变性问题,设计必须了解变化。本文提出了Domino逻辑的那篇文章,以分析可变性问题。这种方法可以减少漏电流以及降低最小延迟罚款的可变性问题。使用Tanner EDA工具在70 nm技术节点下分析各种过程,电压和温度(PVT)变化,用于Domino逻辑和DOMIND逻辑缓冲器。仿真结果表明,DOIND方法对与Domino逻辑电路进行比较的PVT变化的影响较小。

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