Structural analysis mathematical modeling of gate inside organic field effect transistors (GI-OFET) - a novel device structure

摘要

In this paper, a novel device structure Gate-Inside Organic Field Effect Transistors (GI-OFET) for Organic Field Effect Transistor (OFET) has been proposed. An analytical model for the proposed OFET structure has been developed. This analytical modeling is based on the device physics and contact resistance of the proposed device. This innovative structure shows significant performance enhancement in terms of the larger drive current Id , Ion /Ioff ratio, reduced threshold voltage Vth , enhanced transconductance gm , reduced subthreshold slope SS over top contact bottom gate structure of OFET. The developed model holds good for both linear and saturation regions. GIOFET shows considerable improvement over the top contact bottom gate structure of OFET because of its larger gate electrostatic control on the device operation. Hence, GI-OFET has potential to replace the conventional OFET structures.