Development of Multi-wire Electric Discharge Machining for SiC Wafer Processing

摘要

In order to slice the larger size ingot toward 6 inch of silicon carbide (SiC), we are developing Multi-wire Electric Discharge Machining (EDM). To prevent wire break during slicing, we have developed the electric discharge pulse control system. So far, with 10 multi-wires, we have succeeded in slicing of 4 inch SiC balk single crystal without wire break. High quality slicing surface (e.g. small value of around 10 μm of SORI for 3 inch wafer) was also achieved. By polishing method, EDM-sliced wafer was estimated to have the uniform thickness of damaged layer over the entire surface. We confirmed that the wafer sliced by EDM can be processed in the later process, by grinding the 3 inch wafer. And it was confirmed that 6 inch ingot can be sliced with 10 multi-wire EDM, by slicing the boule of SiC poly crystal. For the larger diameter ingot than 4 inch, Multi-wire EDM will be practically used by the effective removal of machining chips from the machining clearance between the wire and work.