Ferroelectric Properties of Bismuth Titanate Ceramics by Tb3+,4+/V5+ Substitution

摘要

The Ferroelectric properties and Microstructures of Bi3.3Tb0.6Ti3O12 (BTT) and Bi3.3Tb0.6Ti2.97V0.03O12 (BTTV) ceramics prepared at 1100°C by a conventional ceramic technique were investigated.These ceramics possess random-oriented polycrystalline structure.The remanent polarization (Pr) and coercive field (Ec) of the BTT ceramics are 23μC/cm2 and 80kV/cm,respectively.Furthermore,V substitution improves the Pr value of the BTTV ceramics up to 35μC/cm2,which is larger than that of the BTT ceramics.Therefore,co-sustitution of Tb and V in Bi4Ti3O12 (BIT) ceramic is effective for the improvement of its ferroelectricity.