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Thin film resistive materials: past, present and future

机译:薄膜电阻材料:过去,现在和未来

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This paper explores the key developments in thin film resistive materials for use in the fabrication of discrete precision resistors. Firstly an introduction to the preparation of thin films and their fundamental properties is given with respect to well established systems such as NiCr, TaN and CrSiO. The effect of doping these systems in both solid and gaseous forms to further refine their structural and electrical properties is then discussed before the performance of more recent materials systems such as CuAlMo and Mn3AgCuN are reviewed. In addition to performance of the materials themselves, the effect of varying processing parameters such as deposition pressure and temperature and subsequent annealing environment, as well as laser trimming energy and geometry are also studied. It is shown how these parameters can be systematically controlled to produce films of the required properties for varying applications such as high precision, long term stability and high power pulse performance.
机译:本文探讨了用于制造离散精密电阻器的薄膜电阻材料的关键开发。首先,对薄膜的制备及其基本性质的介绍是关于NICR,TAN和CRSIO等优于成熟的系统。然后讨论在审查更多最近的材料和MN3AGCUN等材料系统的性能之前讨论掺杂固体和气态形式以进一步优化其结构和电性能的效果。除了材料本身的性能之外,还研究了不同加工参数,例如沉积压力和温度和随后的退火环境的影响,以及激光修剪能量和几何形状。示出了如何系统地控制这些参数以产生所需性能的薄膜,以实现高精度,长期稳定性和高功率脉冲性能。

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