Design of CMOS Dual-band Reconfigurable Low Noise Amplifier for Radar T/R Module

摘要

A dual-band reconfigurable low noise amplifier (LNA) for T/R module is designed based on SMIC 65nm CMOS process In this paper, the low noise amplifier can operate in L/S band optionally. The simulation results shown it has a larger than 20dB gain and smaller than 2.5dB noise figure for both L and S bands, the IP3 is bigger than -8dBm, the layout of low noise amplifier occupies 1750um*1000um area.