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Investigation of half-metallic ferromagnetism in Ti-doped BeS DMS compound: A promising spintronic material

机译:Ti-Doped BES化合物中半金属铁磁性的研究:一种有前途的旋流材料

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The first principles calculationshave been performed to calculate the electronic and magnetic properties of Be_(1-x)Ti_xS (x=0.03 and 0.06) Diluted Magnetic Semiconductor (DMS) compound using full potential linearized augmented plane wave (FPLAPW) method based on density functional theory (DFT). The estimatedresults show that the substitution of Ti-dopant at the cation (Be) site alters the ground state properties of host BeS compound significantly and the resultant compounds becomes true half metallic (HM) ferromagnet. This behavior is due to the hybridization of S-p states with Ti-d states at/near E_F which introduces a gap in minority spin channel with 100% spin polarization at E_F. The resultant compounds at both dopant concentrations have band gap at the Fermi level (E_F) for only one spin channel and showing metallic property for other spin channel which is desired feeeature for spintronic applications. The Ti-doping in BeS induces a net magnetic moment of ~2.0 μ_B which shows an important role played by Ti-d states in total magnetic moment. The half metallic character of Ti-doped BeS makes it as promising material for spintronic devices.
机译:calculationshave被进行基本原理计算Be_(1-X)的电子和磁特性Ti_xS(X = 0.03和0.06),使用全部潜力线性缀加平面波稀磁半导体(DMS)化合物基于密度泛函(FPLAPW)方法理论(DFT)。所述estimatedresults表明,钛掺杂剂中的阳离子(BE)网站涂改主机BES的基态性质显著化合物和所得到的化合物的取代变为真半金属(HM)强磁性体。这种现象是由于S-对状态与钛d状态在/近E_F杂交,介绍与在E_F 100%的自旋极化的少数自旋通道的间隙。在两个掺杂剂浓度将得到的化合物在费米能级(E_F),用于仅一个自旋通道和表示针对其期望feeeature于自旋电子应用的其它自旋通道金属性质的带隙。在Ti-掺杂在BES诱导〜2.0μ_B的净磁矩,其示出了重要的作用的Ti-d的状态在总磁矩播放。的Ti掺杂的BES的半金属特性使得它作为用于自旋电子器件有前途的材料。

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