Solution Synthesis of Indium Nitride Quantum Dots and Its Application to Nitride Nanophosphors

摘要

Quantum dots (QDs) are attracting attention as next-generation fluorescent materials because of showing a sharp emission spectrum due to transitions between discretized levels. In recent years, a DC light emitting device using a quantum dot as an active layer (QLED), which achieved high EQE (~18%) almost equal to an organic light emitting diode (OLED) has been reported.1 However, quantum dots conforming to RoHS have some problems of poor heat resistance and withstand voltage.