This paper is focused on the numerical algorithms for solving the one-diode model of a crystalline solar cell. Numerical experiments show that, generally, the algorithms reproduce accurately the I-V characteristics while the modeled parameters (the diode saturation current, serial resistance and the diode ideality factor) experience a large dispersion. The question arising here is: which is the correct set of the modeled parameters? In order to address this issue, the extracted parameters are compared with the measured ones for a silicon solar cell produced at ISC Konstanz. An attempt to solve numerically the one-diode model for accurate parameters extraction is discussed.
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