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First-principles Study of Electronic and Optical Properties of Boron and Nitrogen Doped Graphene

机译:硼和氮掺杂石墨烯的电子和光学性质的第一原理研究

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First-principles study have been performed to investigate the effects of boron (B) and nitrogen (N) co-doping and the effect of varying dopant concentration on electronic and optical properties of graphene. The band structure, density of states (DOS) plots and optical properties are calculated for BN rings doped structures. It was observed that, BN rings doped graphene structure shows a direct band gap opening which increases by increase in the number of BN rings present in the graphene sheet, also a significant red shift in absorption towards visible region is found to occur and the absorption peak at 14 eV energy reduces by increasing number of BN rings in graphene sheet. These findings can be helpful to engineer the band structure and in tailoring the optical properties in visible region for graphene.
机译:已经进行了第一原理研究以研究硼(B)和氮气(N)共掺杂的影响及不同掺杂剂浓度对石墨烯的电子和光学性质的影响。为BN环掺杂结构计算频带结构,状态的密度(DOS)图和光学性质。观察到,BN环掺杂的石墨烯结构示出了直接带隙开口,该直接带间隙开口通过增加石墨烯片中存在的BN环的数量增加,也发现了对可见区域的吸收的显着的红色移位,并且吸收峰值在14eV中,通过越来越多的石墨烯片中的BN环的能量减小。这些发现可以有助于工程师结构和剪裁石墨烯的可见区域中的光学性质。

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