Annealing dependence on flexible p-CuGaO_2/n-ZnO heterojunction diode deposited by RF sputtering method

摘要

In this work, p-CuGaO_2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO_2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO_2 (015) peak is not visible at 44°C. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO_2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.