In the present communication, we report the results on the structural and electrical studies on nanostructured pure (ZnO) and Vanadium (V) doped Zn_(0.95)V_(0.05)O samples synthesized using low cost Sol-Gel technique. To understand the structural properties and their dependence on V substitution, X-Ray diffraction (XRD) measurement was carried out for both the samples understudy. XRD results reveal the single phasic wurtzite nature of both the samples showing hexagonal unit cell structure. A minor phase of ZnV_2O_6 is observed in V doped ZnO sample. Improved dielectric permittivity, enhanced ac conductivity (σ_(ac)) and suppression in impedance have been discussed on the basis of structural modifications by the substitution of V in ZnO, enhanced charge carrier concentration, charge carrier polarization and correlated barrier hopping due to the localized state.
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