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Hikami-Larkin-Nagaoka (HLN) fitting of magneto transport of Bi_2Se_3 single crystal in different magnetic field ranges

机译:Hikami-Larkin-Nagaoka(HLN)在不同磁场范围内拟合Bi_2se_3单晶的磁路运输

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We report the detailed study of structural/micro-structural and high magnetic field magneto transport properties of Bi_2Se_3 single crystal. Bi_2Se_3 single crystal is grown through conventional solid-state reaction route via the self-flux method. Rietveld analysis on Powder X-ray Diffraction (PXRD) showed that the studied Bi_2Se_3 crystal is crystallized in single-phase without any impurity. The surface morphology analyzed through Scanning Electron Microscopy (SEM) study which shows that as-grown single crystal exhibit layered type structure and the quantitative weight% of the atomic constituents (Bi and Se) are found to be close to the stoichiometric amount in energy-dispersive X-ray spectroscopy (EDS) analysis. Low temperature (2.5K) magneto-resistance (MR) exhibited a v-type cusp around origin at lower magnetic field, which is the sign of weak anti-localization (WAL) effect. Further, Bi_2Se_3 single crystal magneto conductivity data is fitted by well-known HLN equation in different magnetic field range of 2Tesla, 4Tesla and 6Tesla and the resultant found that the conduction mechanism of Bi_2Se_3 is dominated by WAL state.
机译:我们报道了Bi_2Se_3单晶的结构/微结构和高磁场磁传输性能的详细研究。 Bi_2Se_3单晶通过自助焊法通过传统的固态反应路径生长。 RIETVELD对粉末X射线衍射(PXRD)的分析表明,研究的BI_2SE_3晶体在单相中结晶而无需任何杂质。通过扫描电子显微镜(SEM)研究分析的表面形态,其表明以生长的单晶表现出分层型结构和原子成分(BI和SE)的定量重量%靠近能量中的化学计量量 - 分散X射线光谱(EDS)分析。低温(2.5K)磁阻(MR)在较低磁场下出现源于原点的V型尖端,这是弱抗定位(WAL)效应的符号。此外,Bi_2Se_3单晶磁电导率数据通过众所周知的HLN方程,在2TESLA,4TESLA和6TESLA的不同磁场范围内,并且结果发现Bi_2se_3的导通机制由WAL状态主导。

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