Effect of carrier-carrier collisions on RF performance of millimeter-wave IMPATT sources

摘要

In this paper, the authors have studied the effect of carrier-carrier collisions on the static (DC) and large-signal characteristics of Double-Drift Region (DDR) IMPATTs based on Si designed to operate at mm-wave atmospheric window frequencies such as 94, 140 and 220 GHz. Simulations are carried out to study the RF performance of those diodes by taking into account both empirical relation of field dependence of ionization rates developed from experimental data as well as a appropriate analytical model of same parameter which takes into account the energy loss of charge carriers due to carrier-carrier collisions. Studies have been carried out to investigate how far extent the carrier-carrier interactions affects the RF performance of the device especially at higher mm-wave frequencies.