Multilevel Hierarchical Structure Formed in the Film (Ti)/Substrate (SiC-Ceramics) System under Irradiation by an Intense Pulsed Electron Beam

摘要

The aim of this study was the formation of multilevel hierarchical structure in the SiC ceramics surface layer as a result melting of the film (Ti)/substrate (SiC-ceramics) system by an intense pulsed electron beam. SiC ceramics samples obtained by SPS-sintering were used. Titanium film of 0.5 μm was formed by vacuum electric-arc plasma-assisted spraying of cathode from VT1-0 technical-grade titanium. Irradiation of the film/substrate system was carried out with an intense pulsed electron beam of submillisecond duration with the following parameters: accelerated electron energy 17 keV, electron beam energy density 15 J/cm~2, pulse duration 200 μs, quantity of pulses 30, and residual gas (argon) pressure in the working chamber 0.03 Pa. As a result of completed studies formation of multilevel multiphase submicro-nanocrystalline hierarchical structure with microhardness in the range from 35 to 96 GPa was found, repeatedly exceeding the microhardness of the initial SiC ceramics.