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Structural, Morphological and Optical Properties of Sol-gel derived ZnO Thin Film for UV Sensing Application

机译:溶胶 - 凝胶衍生ZnO薄膜的结构,形态学和光学性质,用于紫外传感施用

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In the current research we have studied the structural, morphological, optical and ultraviolet (UV) light sensing properties of ZnO thin film. The film was prepared by sol-gel technique and deposited on glass substrate by spin coating method. The structural analysis was performed by X-ray diffractometer (XRD) while the surface morphology and optical properties of the deposited thin film were monitored using field emission scanning electron microscope and UVVIS spectrophotometer. The FESEM image displayed the homogenous coverage of ZnO nanoparticles over the surface of glass substrate. The deposited thin film shows an average transmittance value of more than 90%, in the visible light spectrum. The calculated value for optical band-gap was 3.26 eV. Refractive indices and dielectric constants were calculated by utilizing the bandgap value by considering different relations. Current to voltage characterization was conducted by using Kiethley sourcemeter connected with ultraviolet (UV) light illuminated LED's. The excellent photo to dark current (Iph/Id) ratio (5.49) and rapid rise and decay time (15 s and 6 s) and the measured responsivity (1 A/W) suggest that the deposited ZnO thin film can be used for ultraviolet (UV) light sensing application.
机译:在目前的研究中,我们研究了ZnO薄膜的结构,形态,光学和紫外(UV)光传感性能。通过溶胶 - 凝胶技术制备薄膜并通过旋涂法在玻璃基板上沉积。通过X射线衍射仪(XRD)进行结构分析,而使用场发射扫描电子显微镜和UVVIS分光光度计监测沉积的薄膜的表面形态和光学性质。 FeSEM图像显示在玻璃基板表面上的ZnO纳米颗粒的均匀覆盖范围。沉积的薄膜显示在可见光光谱中的平均透射率值超过90%。光带间隙的计算值为3.26eV。通过考虑不同的关系来计算通过利用带隙值来计算折射率和介电常数。通过使用与紫外线(UV)光相连的KieThley SourCemeter进行电流来进行电压表征。暗电流的优异照片(IPH / ID)比率(5.49)和快速上升和衰减时间(15秒和6秒)和测量的响应度(1A / W)表明沉积的ZnO薄膜可用于紫外线(UV)光传感应用。

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