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Mixed potential function for a class of memristive circuits

机译:一类忆出电路的混合潜在功能

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This paper recounts the idea of finding a mixed potential function which subsumes the dynamics of a memristor. The main belief in writing this paper is for continuing the theory of mixed potential function in relation to memristive circuits. In this paper we assigned a new state variables for memristive circuits. The capacitor and inductor has voltage and current as state variables. Therefor we define a new state variable as flux or charge for the memristive circuit. Especially in a case considering memristor in a circuit is a motivation to model the nonlinear circuit in the Brayton Moser form. By means of different class of nonlinear circuits the mixed potential has been constructed by a fine approach in light of first order, second order and third order circuits. This mixed potential function can be further used to prove the stability of circuits under certain conditions, by using theorems developed by Brayton and Moser.
机译:本文叙述了查找混合潜在功能的想法,该函数归入忆阻器的动态。写作本文的主要信念是继续与忆内电路相关的混合潜在功能理论。在本文中,我们为Memristive电路分配了新的状态变量。电容器和电感器具有电压和电流作为状态变量。因此,我们将新状态变量定义为存储器电路的通量或充电。特别是在考虑电路中的忆反镜的情况下是模拟Brayton Moser形式中的非线性电路的动机。借助于不同类别的非线性电路,利用第一阶,二阶和三阶电路的光学方法构造了混合电位。这种混合电位功能可以进一步用于通过使用Brayton和Moser开发的定理来证明某些条件下电路的稳定性。

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